r07ds0819ej0100 rev.1.00 page 1 of 7 feb 04, 2013 preliminary datasheet RJL60S5DPP-E0 600v - 20a - sj mos fet high speed power switching features ? superjunction mosfet ? built-in fast recovery diode t rr = 170 ns typ. (at i f = 20 a, v gs = 0, di f /dt = 100 a/ ? s, ta = 25 ? c) ? low on-resistance r ds(on) = 0.15 ? typ. (at i d = 10 a, v gs = 10 v, ta = 25 ? c) outline renesas package code: prss0003ag-a (package name: to-220fp) 1 2 3 d 1. gate 2. drain 3. source s g absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 600 v gate to source voltage v gss +30, ? 20 v tc = 25 ?c i d note1 20 a drain current tc = 100 ?c i d note1 12.6 a drain peak current i d (pulse) note1 40 a body-drain diode reverse drain current i dr note1 20 a body-drain diode reverse drain peak current i dr (pulse) note1 40 a avalanche current i ap note2 4 a avalanche energy e ar note2 0.87 mj channel dissipation pch note3 33.7 w channel to case thermal impedance ? ch-c 3.7 ?c/w channel temperature tch 150 ?c storage temperature tstg ?55 to +150 ?c notes: 1. limited by tch max. 2. stch = 25 ? c, tch ? 150 ?c 3. value at tc = 25 ?c r07ds0819ej0100 rev.1.00 feb 04, 2013
RJL60S5DPP-E0 preliminary r07ds0819ej0100 rev.1.00 page 2 of 7 feb 04, 2013 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 600 ? ? v i d = 10 ma, v gs = 0 zero gate voltage drain current i dss ? ? 1 ma v ds = 600 v, v gs = 0 gate to source leak current i gss ? ? 0.1 ? av gs = +30v, ? 20 v, v ds = 0 gate to source cutoff voltage v gs(off) 3 ? 5 v v ds = 10 v, i d = 1 ma r ds(on) ? 0.150 0.178 ? i d = 10 a, v gs = 10 v note4 static drain to source on state resistance r ds(on ? 0.375 ? ? ta = 150c i d = 10 a, v gs = 10 v note4 gate resistance rg ? 4.5 ? ? f = 1 mhz v ds = 25 v, v gs = 0 input capacitance ciss ? 1700 ? pf output capacitance coss ? 2200 ? pf reverse transfer capacitance crss ? 18 ? pf v ds = 25 v v gs = 0 f = 100khz turn-on delay time t d(on) ? 22 ? ns rise time t r ? 31 ? ns turn-off delay time t d(off) ? 101 ? ns fall time t f ? 27 ? ns i d = 10 a v gs = 10 v r l = 30 ? rg = 10 ? note4 total gate charge qg ? 46 ? nc gate to source charge qgs ? 11 ? nc gate to drain charge qgd ? 23 ? nc v dd = 480 v v gs = 10 v i d = 20 a note4 body-drain diode forward voltage v df ? 1.0 1.6 v i f = 20 a, v gs = 0 note4 body-drain diode reverse recovery time t rr ? 170 ? ns body-drain diode reverse recovery current i rr ? 13 ? a body-drain diode reverse recovery charge q rr ? 1.2 ? ? c i f = 20 a v gs = 0 di f /dt = 100 a/ ? s note4 notes: 4. pulse test
RJL60S5DPP-E0 preliminary r07ds0819ej0100 rev.1.00 page 3 of 7 feb 04, 2013 main characteristics 40 30 20 10 40 30 20 10 2 468 10 drain to source voltage v ds (v) drain current i d (a) typical output characteris tics 11 0 0 10 0.1 1 0.01 drain current i d (a) drain to source on state resistance r ds(on) () static drain to source on state resistance vs. drain current (typical) ta = 25c pulse test v gs = 10 v pulse test v g s = 5 v 6 .6 v 5 .4 v 5.8 v 6 .2 v 0 0 2 468 10 0 10 v 15 v 2 468 10 drain to source voltage v ds (v) drain current i d (a) typical output characteris tics ta = 125c pulse test v g s = 5 v 5 .8 v 5 .4 v 6.6 v 6.2 v 0 0 10 v 15 v gate to source voltage v gs (v) drain current i d (a) typical transfer characteris tics 10 1 0.1 100 0.01 v ds = 10 v pulse test ta = 75c 25c ta = 125c 25c ?25c 02 55 0100 75 125 150 175 channel dissipation pch (w) case t emperature t c (c) channel dissipation vs. case temperature 50 40 30 20 10 0 7 v 7 v drain to source voltage v ds (v) drain current i d (a) maximum safe operation area 0.1 1 10 100 110100 1000 tc = 25c 1 shot operation in this area is limited by r ds(on) 10 s pw = 100 s
RJL60S5DPP-E0 preliminary r07ds0819ej0100 rev.1.00 page 4 of 7 feb 04, 2013 10000 1000 100 10 100000 0 501 5 0100 3002 50 200 0 501 5 0100 3002 50 200 capacitance c (pf) e oss (j) drain to source voltage v ds (v) drain to source voltage v ds (v) c oss stored energy (typical) typical capacitance vs. drain to source voltage 1 0.1 800 16 600 12 400 8 200 0 4 0 gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics (typica l) 4 3 2 1 0 020 40 60 80 v gs v ds i d = 20 a ta = 25c v dd = 480 v 300 v v dd = 480 v 300 v v gs = 0 f = 100 khz ta = 25c ciss coss crss reverse drain current i dr (a) reverse recovery time t rr (ns) body-drain diode reverse recovery time (typica l) 1 10 100 1000 100 10 di/dt = 100 a/s v gs = 0, ta = 25c source to drain voltage v sd (v) reverse drain current vs. source to drain voltage (typical) reverse drain current i dr (a) 00 .4 0.8 1.2 1.6 100 1 10 0.1 v gs = 0 pulse test 25c ta = 125c 0.5 0.4 0.3 0.2 0.1 0 case temperature tc (c) static drain to source on state resistance r ds(on) () static drain to source on state resistance vs. temperature (typical) ?25 0 5 02 575 100 12 5 150 v gs = 10 v pulse test i d = 20 a 10 a 5 a
RJL60S5DPP-E0 preliminary r07ds0819ej0100 rev.1.00 page 5 of 7 feb 04, 2013 d = 1 0.5 0.2 0.01 0.05 0.02 10 1 0.001 0.01 0.1 0.01 1 shot pulse 10 100 1 m10 m100 m1 100 10 p dm pw t d = pw t ch ? c(t) = s (t) ? ch ? c ch ? c = 3.7c/w ?25 0 5 02 575 100 12 5 150 case temperature tc (c) gate to source cutoff voltage vs. case temperature (typical) gate to source cutoff voltage v gs(off) (v) 0 4 2 3 1 5 6 ?25 0 5 02 575 100 12 5 150 case temperature tc (c) drain to source breakdown voltage vs. case temperature (typical) drain to source breakdown voltage v (br)dss (v) i d = 10 ma v gs = 0 400 600 500 700 800 v ds = 10 v pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width i d = 10 ma 1 ma 0.1 ma 0 0.8 0.4 1.2 1.6 5 0257 5 100 12 5 150 channel temperature tch (c) maximum avalanche energy vs. channel t emperature derat ing repetitive avalanche energy e ar (mj) v dd = 50 v rg 100
RJL60S5DPP-E0 preliminary r07ds0819ej0100 rev.1.00 page 6 of 7 feb 04, 2013 vin monitor d.u.t. vin 10 v r l v dd = 300 v t r t d(on) vin 90% 90% 10% 10% vout t d(off) vout monitor 10 90% 10% t f switching time test circuit waveform d . u. t 100 rg i ap monitor v ds monitor v dd vi n 0 i d v ds i ap v (br)dss l v dd e ar = l ? i ap 2 ? 2 1 v dss v dss ? v dd a valanche t est circuita valanche w aveform
RJL60S5DPP-E0 preliminary r07ds0819ej0100 rev.1.00 page 7 of 7 feb 04, 2013 package dimension 5.08 0.20 3.18 0.20 6.68 0.20 3.18 0.10 0.80 0.20 1.28 0.30 2.76 0.20 4.7 0.2 0.50 2.54 0.20 max 1.47 3.3 0.2 15.87 0.20 12.98 0.30 10.16 0.20 unit: mm ? 1.9g mass[typ.] ? prss0003ag-a renesas code jeita package code previous code package name to-220fp ordering information orderable part number quan tity shipping container RJL60S5DPP-E0#t2 50 pcs tube
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